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| HA17458 Series Dual Operational Amplifier REJ03D0680-0100 (Previous: ADE-204-040) Rev.1.00 Jun 15, 2005 Description HA17458 is dual operational amplifiers which provides internal phase compensation and high performance. It can be applied widely to measuring control equipment and to general use. Features * * * * High voltage gain: 100dB (Typ) Wide output amplitude: 13V (Typ) [at RL 2k] Protected from output shortcircuit Internal phase compensation Ordering Information Type No. HA17485FP HA17458F HA17458 HA17458PS Application Industrial use Commercial use Commercial use Industrial use Package Code (Previous Code) PRSP0008DE-B (FP-8DGV) PRSP0008DE-B (FP-8DGV) PRDP0008AF-A (DP-8B) PRDP0008AF-A (DP-8B) Rev.1.00 Jun 15, 2005 page 1 of 8 HA17458 Series Pin Arrangement Vout1 1 Vin(-)1 2 Vin(+)1 3 VEE 4 1 -+ 2 +- 8 VCC 7 Vout2 6 Vin(-)2 5 Vin(+)2 (Top View) Circuit Schematic (1/2) VCC Vin(+) Vin(-) Vout to VEE to VCC to VCC VEE Rev.1.00 Jun 15, 2005 page 2 of 8 HA17458 Series Absolute Maximum Ratings (Ta = 25C) Ratings Item Supply voltage Intput voltage Differential input voltage Power dissipation Operating temperature Symbol VCC VEE VIN* VIN(diff) PT Topr 3 HA17458 HA17458PS HA17458F HA17458FP Unit V V V V +18 -18 15 30 670* -20 to +75 1 +18 -18 15 30 670* -20 to +75 1 +18 -18 15 30 385* -20 to +75 2 +18 -18 15 30 385* -20 to +75 2 mW C Storage temperature Tstg -55 to +125 -55 to +125 -55 to +125 -55 to +125 C Notes: 1. These are the allowable values up to Ta = 45 C. Derate by 8.3mW/C above that temperature. 2. These are the allowable values up to Ta = 31 C mounting on 30% wiring density glass epoxy board. Derate by 7.14mW/C above that temperature. 3. If the supply voltage is less than 15V, input voltage should be less than supply voltage. Electrical Characteristics 1 (VCC = -VEE = 15V, Ta = 25C) Item Input offset voltage Input offset current Input bias current Line regulation Voltage gain Common mode rejection ratio Common mode input voltage range Peak-to-peak output voltage Power dissipation Slew rate Input resistance Input capacitance Output resistance Symbol VIO IIO IIB VIO/VCC VIO/VEE AVD CMR VCM Vop-p Pd SR Rin Cin Rout Min -- -- -- -- -- 86 70 12 12 -- -- 0.3 -- -- Typ 2.0 6 30 30 30 100 90 13 14 90 0.6 1.0 6.0 75 Max 6.0 200 500 150 150 -- -- -- -- 200 -- -- -- -- Unit mV nA nA V/V V/V dB dB V V mW V/s M pF Test conditions RS 10k RS 10k RS 10k RL 2k, Vout = 10V RS 10k RL = 10k No load, 2 channel AVD = 1 Electrical Characteristics 2 (VCC = -VEE = 15V, Ta = -20 to +75C) Item Input offset voltage Input offset current Input bias current Voltage gain Peak-to-peak output voltage Symbol VIO IIO IIB AVD Vop-p Min -- -- -- 80 10 Typ -- -- -- -- 13 Max 9.0 400 1100 -- -- Unit mV nA nA dB V Test conditions RS 10k RL 2k, Vout = 10V RL = 2k Rev.1.00 Jun 15, 2005 page 3 of 8 HA17458 Series Characteristic Curves Input Offset Voltage vs. Ambient Temperature 5 Input Offset Voltage VIO (mV) Input Bias Current IIB (nA) Input Bias Current vs. Ambient Temperature 100 VCC = + 15 V VEE = -15 V 80 4 VCC = + 15 V VEE = -15 V RS < 10 k = 3 60 2 40 1 20 0 -20 0 20 40 60 80 0 -20 0 20 40 60 80 Ambient Temperature Ta (C) Ambient Temperature Ta (C) Input Offset Current vs. Ambient Temperature 20 Input Offset Current IIO (nA) Power Dissipation Pd (mW) Power Dissipation vs. Ambient Temperature 200 VCC = + 15 V VEE = -15 V No Load Both Amplifiers VCC = + 15 V VEE = -15 V 16 12 100 8 4 0 -20 0 20 40 60 80 0 -20 0 20 40 60 80 Ambient Temperature Ta (C) Ambient Temperature Ta (C) Rev.1.00 Jun 15, 2005 page 4 of 8 HA17458 Series Voltage Gain vs. Ambient Temperature 120 Output Short Current vs. Ambient Temperature 50 Voltage Gain AVD (dB) 110 Output Short Current IOS (mA) VCC = + 15 V VEE = -15 V RL = 2 k 40 VCC = + 15 V VEE = -15 V VOP-P = 0 V 100 30 Source 20 90 Sink 10 80 70 -20 0 20 40 60 80 0 -20 0 20 40 60 80 Ambient Temperature Ta (C) Ambient Temperature Ta (C) 200 Maximum Output Voltage Swing VOP-P (V) Power Dissipation vs. Supply Voltage Ta = 25C No Load Both Amplifiers Maximum Output Voltage Swing vs. Supply Voltage 20 Ta = 25C RL = 2 k 16 Power Dissipation Pd (mW) 150 12 100 +V 8 OP -P OP -P V 50 4 0 3 6 9 12 15 Supply Voltage VCC, VEE (V) 18 0 3 6 9 12 15 Supply Voltage VCC, VEE (V) 18 Rev.1.00 Jun 15, 2005 page 5 of 8 HA17458 Series Voltage Gain vs. Frequency 120 VCC = +15 V VEE = -15 V Ta = 25C RL = 2 k 100 Voltage Gain AVD (dB) 80 60 40 20 0 10 30 100 300 1k 3 k 10 k Frequency (Hz) 30 k 100 k 300 k 1M Phase Angle vs. Frequency 0 VCC = +15 V VEE = -15 V Ta = 25C RL = 2 k -40 Phase Angle (deg) -80 -120 -160 100 300 1k 3k 10 k 30 k Frequency (Hz) 100 k 300 k 1M 3M Rev.1.00 Jun 15, 2005 page 6 of 8 HA17458 Series Maximum Output Voltage Swing vs. Frequency Maximum Output Voltage Swing Vop-p (V) VCC = +15 V VEE = -15 V Ta = 25C RL = 10 k Maximum Output Voltage Swing Vop-p (V) 28 24 20 16 12 8 4 0 Maximum Output Voltage Swing vs. Load Resistance 16 12 8 4 0 -4 -8 -12 -16 VCC = +15 V VEE = -15 V Ta = 25C 100 500 1k 5k 10k 50k 100k Frequency f (Hz) 500k 200 500 1k 5k 10k Load Resistance RL () Voltage Follower Large Signal Pulse Response 10 Input and Output Voltage (V) VCC = +15 V VEE = -15 V RL = 2 k CL = 100 pF Ta = 25C Output 0 Input -10 0 20 40 60 Time (s) 80 Rev.1.00 Jun 15, 2005 page 7 of 8 HA17458 Series Package Dimensions JEITA Package Code P-DIP8-6.3x9.6-2.54 RENESAS Code PRDP0008AF-A Previous Code DP-8B MASS[Typ.] 0.51g D 8 5 1 0.89 b3 4 Z Dimension in Millimeters Min Nom 7.62 9.6 6.3 10.6 7.4 5.06 0.5 0.38 0.48 1.3 0.20 0 2.29 2.54 0.25 0.35 15 2.79 1.27 2.54 0.58 Max E Reference Symbol e1 A A1 D E A L A1 bp b3 e bp e1 c c e Z L JEITA Package Code P-SOP8-4.4x4.85-1.27 RENESAS Code PRSP0008DE-B Previous Code FP-8DGV MASS[Typ.] 0.1g *1 D 5 F NOTE) 1. DIMENSIONS"*1 (Nom)"AND"*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION"*3"DOES NOT INCLUDE TRIM OFFSET. 8 bp *2 HE E c Reference Symbol Dimension in Millimeters Min Nom 4.85 4.4 Max 5.25 Index mark Terminal cross section ( Ni/Pd/Au plating ) 1 Z e 4 *3 D E A2 bp A1 x M L1 A bp b1 c c1 0.00 0.1 0.20 2.03 0.35 0.4 0.45 0.15 0.20 0.25 HE 0 6.35 6.5 1.27 8 6.75 A A1 L e x y 0.12 0.15 0.75 0.42 1 y Detail F Z L L 0.60 1.05 0.85 Rev.1.00 Jun 15, 2005 page 8 of 8 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 http://www.renesas.com (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon 2.0 |
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